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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-220 package *High voltage ,high speed APPLICATIONS *Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION MJE18004 ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1000 450 9 5 10 2 4 100 150 -65~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C Rth j-A PARAMETER Thermal resistance junction to case Thermal resistance junction to ambient MAX 1.25 62.5 UNIT /W /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=0.1A; L=25mH IC=1A ;IB=0.1A TC=125 IC=2A ;IB=0.4A TC=125 IC=2.5A ;IB=0.5A IC=1A ;IB=0.1A IC=2A ;IB=0.4A IC=2.5A ;IB=0.5A VCES=RatedVCES; VEB=0 TC=125 VCES=800V ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT COB Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain DC current gain Transition frequency Collector outoput capacitance VCE=RatedVCEO; IB=0 VEB=9V; IC=0 IC=1A ; VCE=2.5V IC=1A ; VCE=5V IC=2A ; VCE=1V IC=5mA ; VCE=5V IC=0.5A ; VCE=10V;f=1.0MHz IE=0 ; VCB=10V;f=1.0MHz 12 14 6 10 MIN 450 SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 VBE(sat)-3 MJE18004 TYP. MAX UNIT V 0.5 0.6 0.45 0.8 0.75 1.1 1.25 1.3 0.1 0.5 0.1 0.1 0.1 V V V V V V ICES Collector cut-off current mA mA mA 36 13 45 MHz pF Switching times resistive load,Duty CycleC10%,Pulse Width=20s ton ts tf Turn-on time Storage time Fall time VCC=250V ,IC=2.5A IB1=0.5A; IB2=0.5A 0.6 3.0 0.4 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJE18004 Fig.2 Outline dimensions (unindicated tolerance:0.10mm) 3 |
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